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Ok, this is what I'd come up with. When Vcbo is applied, it's a simple reverse biased diode and as the base and collector are lightly doped compare to emitter, the depletion region will be spread farther apart and leakage current will be small. But when Vceo is applied, the emitter junction is not r...

Hi dyarker, your explanation make sense to me. But at this moment I can not take in the whole picture and comprehend it all yet. I'm going to analyze it more closely base on your assumption in pencil and paper method (for all the diffusion current, drift current, polarities etc. in detail), because ...

Hi, I'm talking about the off characteristics (reverse breakdown between two terminals while the third terminal is left opened), it might be related to the doping level of semiconductor or something else. If anyone have knowledge please explain.

In all the BJT spec's why Vceo, (the reverse breakdown voltage between collector and emitter when base is open) is always less than Vcbo (the reverse breakdown voltage between collector and base while emitter is open) even though it is across two junctions instead of only one junction of collector a...